Materials Reports 2021, Vol. 35 Issue (z2): 118-120 |
INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
|
|
|
|
|
Crucible Material Technology for AlN Crystal Growth via PVT Method |
WANG Jiabin1, CHEN Hongmei1,2, YUAN Chao1
|
1 Hunan Provincial Key Laboratory of Fine Ceramics and Powder Materials, Hunan University of Humanities Science & Technology, Loudi 417000 2 Hunan International Economics University, Changsha 410205 |
|
|
Abstract Aluminum nitride (AlN) is one of the most important third-generation wide-gap semiconductor materials, which has excellent properties such as wide band gap, high melting point, high critical breakdown field strength, high temperature thermal stability and chemical corrosion resistance. As a widely used technology of AlN crystal growth, Physical Vapor Phase Transport method (PVT) has a harsh process conditions and environment. Long life crucible with high temperature resistance and corrosion resistance has become one of the technical problems for a big size, high quality AlN crystal growth. This paper introduces the principle and method of AlN crystals PVT growth process, and analyses the performance requirements of the crucible material for the crystal growth. The preparation techniques of TaC crucible and TaC coated graphite crucible are reviewed.
|
Published: 09 December 2021
|
|
Fund:This work was financially supported by the Scientific Research Project of Provincial Education Department of Hunan (18A482). |
About author:: Jiabin Wang is an undergraduate student of Hunan University of Humanities Science & Technology. She was the 2019—2020 National Encouragement Scholarship winner and won the 2018—2019 Innovation Award. She has participated in the “Internet +” College Students' Innovation and Entrepreneurship Competition for many times. She was interested in the studies of TaC coating. Hongmei Chen obtained her Ph.D. degree from Central South University in 2009, and studied as a visiting scholar at the Department of Materials, Imperial College London in 2011. Her team's research interests are thermodynamics calculation of nonmetallic materials, the design and preparation of high temperature ceramic materials. She has published more than 10 journal papers in international and domestic core journals as the first author, and hosted or participated in several national and provincial research projects. |
|
|
1 Strite S, Morkoç H. Journal of Vacuum Science and Technology B, 1992, 10(4), 1237. 2 Taniyasu Y, Kasu M, Makimoto T. Nature, 2006, 441(7091), 325. 3 Kneissl M, Yang Z, Teepe M, et al. Journal of Applied Physics, 2007, 101(12), 123103. 4 赵超亮, 宋波, 张幸红,等. 材料导报, 2012, 26(9), 11. 5 Herro Z G, Zhuang D, Schlesser R, et al. Journal of Crystal Growth, 2010, 312(18), 2519. 6 齐海涛, 洪颖, 王香泉,等. 硅酸盐学报, 2013, 41(6), 803. 7 金雷. 物理气相传输法生长氮化铝晶体的机制研究. 博士学位论文, 哈尔滨工业大学, 2015. 8 Dalmau R, Raghothamachar B, Dudley M, et al. MRS Online Procee-ding, 2003, 798, 287. 9 Schlesser R, Dalmau R, Zhuang D, et al. Journal of Crystal Growth, 2005, 281(1), 75. 10 Hartmann C, Dittmar A, Wollweber J, et al. Semiconductor Science and Technology, 2014, 29(8), 084002. 11 Chen W H, Qin Z Y, Tian X Y, et al. Molecules, 2019, 24(8), 1562. 12 Liu B, Edgar J H, Gu Z, et al. Mrs Internet Journal of Nitride Semiconductor Research, 2003, 9(6), 72. 13 Brenner D W, Schlesser R, SitarZ, et al. Surface Science, 2004, 560(1-3), L202. 14 Nino A, Hirabara T, Sugiyama S, et al. International Journal of Refractory Metals & Hard Materials, 2015, 52, 203. 15 Syvájárvi M, Yakimova R,Ciechonski R. R, et al. Diamond & Related Materials, 2003, 12(10-11), 1936. 16 Hartmann C, Wollweber J, Albrecht M, et al. Physica Status Solidi, 2006, 3(6), 1608. 17 Yury Alexandrovich Vodakov, St. Petersburg, et al. US patent, 6,547,877 B2. 18 Dittmar A, Guguschev C, Hartmann C, et al. Journal of the European Ceramic Society, 2011, 31(14), 2733. 19 何捍卫, 周科朝, 熊翔. 稀有金属材料与工程, 2004, 33(5), 490. 20 穆翠红, 刘辉, 迟伟东,等. 化工进展, 2010, 29(8), 1521. 21 Dong Z J, Li X K, Yuan G M, et al. Applied Surface Science, 2008, 254(18), 5936. 22 Long Y, Javed A, Chen J,et al. Materials Letters, 2014, 121(15), 202. 23 Nakamura D, Suzumura A, Shigetoh K. Applied Physics Letters, 2015, 106(8), 082108. 24 Nakamura D, Shigetoh K. Japanese Journal of Applied Physics, 2017, 56(8), 085504. 25 Nakamura D. Applied Physics Express, 2016, 9, 055507. |
No related articles found! |
|
|
|
|