| RESEARCH LETTER |
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| Preparation of Porous Silicon by One-step Reduction of Silica with LiAlH4 |
| WANG Xuchun, ZHANG Xuemei, YE Xiangjie, CHEN Junming, GUO Jiahao, ZHANG Ting, MAO Jie, CHEN Zhongping
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| College of Chemistry and Material Engineering, University of Science and Technology of Anhui, Bengbu 233000; |
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Abstract Porous silicon is becoming a hot research topic both at home and abroad because of its unique and efficient photoelectric effect.The porous silicon was prepared by thermal reduction of silica (micro- or nano-silica) at a temperature of 450 ℃ and 500 ℃ by one-step reacting with LiAlH4.The products were characterized and analyzed by XRD, IR, SEM and SPEF. This experimental method is green and environmentally friendly which has potential value of application.
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Published: 04 May 2018
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1 Zhou Huang. Problems on high purity silicon industry development in our country[J]. Energy China,2008,30(1):5(in Chinese).
周篁. 关于我国高纯硅产业发展问题[J].中国能源,2008,30(1):5.
2 Canhan L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J]. Appl Phys Lett,1990,57(10):1046.
3 Cullis A C, Canhan L T. Visible light emission due to quantum size effects in highly porous crystalline silicon[J]. Nature,1991,353:335.
4 Wei J, Buriak J M, Siuzdak G. Desorption-ionization mass spectrometry on porous silicon[J]. Nature,1999,399(6733):243.
5 Fan S S, Chapline M C, Franklin N R, et al. Self-oriented regular arrays of carbon nanotubes and their field emission properties[J]. Science,1999,283:512.
6 Bao Ximao. Visible light luminescent porous silicon [J]. Progress Phys,1993,13(1):280(in Chinese).
鲍希茂. 发光多孔硅[J]. 物理学进展,1993,13(1):280.
7 Cullis A C, Canhan L T, Loni A, et al. Progress towards silicon optoelectronics using porous silicon technology[J].Appl Surf Sci,1996,102:436.
8 Hirschman K D, Tsybeskov L, Duttagupta S P, et al. Silicon-based visible light-emitting devices integrated into microelectronic circuits[J]. Nature, 1996,384:338.
9 Xu Gaobin, Lu Yi, Chen Xing, et al. Study on controllable preparation of nanometer porous silicon[J].J Electron Measurement Instrumentation,2014,28(12):1308(in Chinese).
许高斌, 卢翌, 陈兴, 等. 纳米多孔硅可控制备研究[J]. 电子测量与仪器学报,2014,28(12):1308.
10 Zhang Lizhu, Duan Jiadi, Zhang Borui, et al. Photoluminescence of silicon quantum wire array fabricated by electrolytic etching[J]. Chin J Semiconductors,1992,13(3):193(in Chinese).
张丽珠, 段家低, 张伯蕊, 等. 氢氟酸电解腐蚀硅制备的量子线阵的光致发光[J]. 半导体学报,1992,13(3):193.
11 Ter L M, Blackwood D J, et al. Characterization of the illuminated silicon-electrolyte interface by fourier-transform infrared spectroscopy[J]. Phys Rev Lett,1989,62:308.
12 刘小兵, 史向华. 多孔硅与全硅基纳米薄膜发光理论及应用[M]. 长沙:国防科技大学出版社,2002.
13 Zou Jun, Peng Guanliang, Chen Junhua, et al. Annealing study of γ-LiAlO2 crystal grown by temperature gradient technique [J]. J Synthetic Crystals,2004,33(6):923(in Chinese).
邹军,彭观良,陈俊华,等. γ-LiAlO2晶体的退火研究[J]. 人工晶体学报,2004,33(6):923.
14 Teo B K, Sun X H. Silicon-based low-dimensional nanomaterials and nanodevices[J]. Chem Rev,2007,107:1454. |
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