INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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Controllable Preparation of Inch-Size MoS2 Few-Layer Thin Films at Low Temperature |
GUO Caisheng, WU Jun, NIU Ben, XIONG Fen, ZHU Bailin, HUANG Chengbin, LIU Jing
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The State Key Laboratory of Refractories and Metallurgy, Faculty of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China |
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Abstract The controllable preparation of large area molybdenum disulfide (MoS2) thin film is the key to its application, especially the MoS2 with few layers and p-type conductivity, which is of great significance for the device application, but few literatures have been reported. In this paper, inch sized few-layer MoS2 thin films were prepared successfully and controllably on glass substrate through room-temperature radio frequency (RF) magnetron sputtering deposition combined with sulfuration annealing at low temperature. The results of atomic force microscopy (AFM), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and ultraviolet visible absorption spectroscopy (UV-vis) show that the large area ultra-thin MoS2 film is composed of polycrystalline three-layer, of which the thickness is of about 2.2 nm. The film is uniform, flat, controllable and with good crystallinity and high stability. The few-layer MoS2 film were prepared on the Si/SiO2 substrate by the same process, a back-gate field effect transistor (TFT) with P-type conductivity and carrier mobility of 0.183 cm2·V-1·s-1 is achieved. The proposed synthesis progress with a characteristic of simpleness and low-temperature is suitable for industrial large-scale production, and paves a selectable way for facile and efficient preparing few- and mono-layer MoS2 film with large-area.
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Published: 01 July 2021
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Fund:Natural Science Foundation of China (051301105, 051471105). |
About author:: Caisheng Guo is currently a master degree candidate in School of Materials and Metallurgy of Wuhan University of Science and Technology. His research interests focus on the preparation of two-dimentional materials. Jun Wu received his Ph. D. degree in Huazhong University of science and technology. He is currently a professor in School of Materials and Metallurgy of Wuhan University of Science and Technology. His research interests are the preparation and application of functional film materials. |
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1 Novoselov K S, Jiang D, Schedin F, et al.Proc Natl Acad Sci USA, 2005, 102(30), 10451. 2 Sun C, Zhao K, He Y, et al. ACS Applied Materials & Interfaces, 2019, 11(23), 20762. 3 Wang H, Lu Z, Kong D, et al.ACS Nano, 2014, 8(5), 4940. 4 Lim Y R, Song W, Han J K, et al.Advanced Materials, 2016, 28(25), 5025. 5 Radisavljevic B, Radenovic A, Brivio J, et al.Nature Nanotechnology, 2011, 6(3), 147. 6 Lopez-Sanchez O, lembke D, Kayci M, et al.Nature Nanotechnology, 2013, 8(7), 497. 7 Bertolazzi S, Brivio J, Kis A.ACS Nano, 2011, 5(12), 9703. 8 Chang H Y, Yang S, Lee J, et al.ACS Nano, 2013, 7(6), 5446. 9 Zheng J, Yan X, Lu Z, et al.Advanced Materials, 2017, 29(13), 1604540. 10 Lee C, Yan H, Brus L E, et al.ACS Nano, 2010, 4(5), 2695. 11 Coleman J N, Lotya M, O'Neill A, et al.Science, 2011, 331(6017), 568. 12 Tan L K, Liu B, Teng J H, et al.Nanoscale, 2014, 6(18), 10584. 13 Martella C, Melloni P, Cinquanta E, et al.Advanced Electronic Materials, 2016, 2(10), 1600330. 14 Liu L, Huang Y, Sha J, et al.Nanotechnology, 2017, 28(19), 195605. 15 Shree S, George A, Lehnert T, et al.2D Materials, 2019, 7(1), 015011. 16 Ardahe M, Hantehzadeh M R, Choranneviss M.Journal of Electronic Materials, 2020, 49(2), 1002. 17 Liu K K, Zhang W, Lee Y H, et al.Nano Letters, 2012, 12(3), 1538. 18 Tao J, Chai J, Lu X, et al.Nanoscale, 2015, 7(6), 2497. 19 Ma S M, Kwon S J, Cho E S.Journal of Nanoscience and Nanotechnology, 2019 19(3), 1439. 20 Hussain S, Shehzad M A, Vikraman D, et al.Nanoscale, 2016, 8(7), 4340. 21 Mak K F, He K, Shan J, et al.Nature Nanotechnology, 2012, 7(8), 494. 22 Coehoorn R, Haas C, Dijkstra J, et al.Physical Review B, 1987, 35(12), 6195. 23 Splendiani A, Sun L, Zhang Y, et al.Nano Letters, 2010, 10(4), 1271. 24 Mak K F, Lee C, Hone J, et al.Physical Review Letters, 2010, 105(13), 136805. 25 He K, Poole C, Mak K F, et al.Nano Letters, 2013, 13(6), 2931. 26 Eda G, Yamaguchi H, Voiry D, et al.Nano Letters, 2011, 11(12), 5111. 27 Lee J U, Kim K, Han S, et al.ACS Nano, 2016, 10(2), 1948. 28 Hussain S, Singh J, Vikraman D, et al.Scientific Reports, 2016, 6, 30791. 29 Chen F, Su W, Ding S, et al.Ceramics International, 2019, 45(12), 15091. 30 Zhao Y, Luo X, Li H, et al.Nano Letters, 2013, 13(3), 1007. 31 Bagaev V S, Krivobok V S, Nikolaev S N, et al.Journal of Russian Laser Research, 2019, 40(3), 269. 32 Li H, Zhang Q, Yap C C R, et al.Advanced Functional Materials, 2012, 22(7), 1385. 33 Jeon J, Jang S K, Jeon S M, et al.Nanoscale, 2015, 7(5), 1688. 34 Van der zande A M, Huang P Y, Chenet D A, et al.Nature Materials, 2013, 12(6), 554. 35 Zhong W, Deng S, Wang K, et al.Nanomaterials, 2018, 8(8), 590. 36 Hasuike N, Yamauchi S, Seki K, et al.Journal of Physics: Conference Series, 2019,1220(1), 012057. 37 McDonnell S, Addou R, Buie C, et al.ACS Nano, 2014, 8(3), 2880. 38 Serrao C R, Diamond A M, Hsu S L, et al.Applied Physics Letters, 2015, 106(5), 052101.1. 39 Chuang S, Battaglia C, Azcatl A, et al.Nano Letters, 2014, 14(3), 1337. 40 Dolui K, Rungger I, Sanvito S.Physical Review B Condensed Matter, 2013, 87(16), 165402-1. 41 Wu J, Li H, Yin Z, et al.Small, 2013, 9(19), 3314. 42 Wang X, Feng H, Wu Y, et al.Journal of the American Chemical Society, 2013, 135(14), 5304. 43 Lee Y H, Zhang X Q, Zahng W, et al.Advanced Materials, 2012, 24(17), 2320. 44 Kang K, Xie S, Huang L, et al.Nature, 2015, 520(7549), 656. |
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