三维封装电迁移Cu互连线的多物理场模拟仿真

doi:10.11896/cldb.20060120

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Abstract With the development of three-dimensional package interconnects decreasing their sizes into sub-micro levels, problems such as high current density, high-stress, and difficulty heat dissipation have become more and more serious. The phenomenon of atomic-scale migration fai-lure has gradually become a reliability problem that cannot be ignored in VLSI. Copper has a lower resistivity than aluminum and has better electromigration resistance. It is a new generation of reliable interconnect material, but there are still insufficient studies on atomic migration of copper interconnects.
The present analytical mode of the electromigration reliability is mainly aimed at the single metal wire at a constant temperature. Although this method is relatively simple to calculate, it has little significance for the guiding of the actual situation. The main reasons are as follows: 1.It is the temperature gradient that exists in high-density integrated circuits in reliability. 2.The three-dimensional structure of the interconnection line has an important influence on the distribution of the temperature and electrical current of the interconnect. These parameters seriously affect the electromigration resistance of metal atoms. This work proposes a new modeling method of electromigration simulation, and establishes a classic three-dimensional Cu interconnect structure through COMSOL multiphysics software. The temperature, current density and stress distribution by a finite element simulation were carried out and better data simulation results were obtained.
The results show that the current in the metal interconnection has serious siltation phenomenon on the inner side of the right angle, and the electromigration is most intense at the turning point of the interconnection line; the high temperature area is located between the inner and outer sides of the right angle, and the degree of thermal migration increases with the increase of temperature; the high-stress area is mainly at the outer edge of the interconnection line, but the stress migration accounts for a relatively small proportion of the overall electromigration, which can be ignored. In addition, the electromigration resistance of Cu is generally better than that of Ag, as Cu is an exceptional high-density integrated circuit conductor material.

Key words： electromigration interconnection line atomic diffusion flux divergence temperature effect material effect

Published: 28 January 2021

CLC number:

TN405.97

Fund:The National Key Research and Development Project of China (2019YFF0217402) and the Natural Science Foundation of China (51805115).

About author:: Shuye Zhangreceived his B.E. degree in electronic packaging from Harbin Institute of Technology in 2012 and received his Ph.D. degree in electronic packaging from KAIST in 2017. He is a lecturer in Harbin Institute of Technology, member of IEEE Reliability Technical Committee, member of Materials and Emerging Research Materials Group for Heterogeneous Integration Roadmap. In April 2020, he was appointed as asso-ciate editor of IMAPS Journal of Microelectronics and Electronic Packaging. His research interests are flexible electronic materials and electronic packaging reliability. He won the second prize of Science and Technology Progress of Henan Province and (6/6) the third prize of Science and technology Progress of China Machinery Industry (3/6) in 2019.
Peng Hereceived his B.E. degree in metal materials and technology from Harbin Institute Technology in 1995 and received his Ph.D. degree in materials scie-nce and engineering from Harbin Institute of Technology in 2001. He is currently a full professor, the director of State Key Laboratory of Advanced Welding and Joi-ning, Harbin Institute of Technology. His research interests are brazing and diffusion in welding, micro connection and reliability, surface modification of ceramic, laser, arc brazing and additive manufacturing.

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	ZHANG Shuye
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Cite this article:

ZHANG Shuye,BAO Tianyu,XIU Ziyang, et al. Multi-physics Simulation of 3D Electromigration of Cu Interconnect[J]. Materials Reports, 2021, 35(2): 2133-2138.

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http://www.mater-rep.com/EN/10.11896/cldb.20060120 OR http://www.mater-rep.com/EN/Y2021/V35/I2/2133

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