Materials Reports 2020, Vol. 34 Issue (Z2): 152-156 |
INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
|
|
|
|
|
Brief Analysis on the Preparation Technology of Polysilicon Rod for Zone Melting |
CHEN Hui 1,2, YAN Dazhou1,3, WAN Ye1,3, SUN Qiang1,3, ZHANG Bangjie1,3
|
1 China Silicon Corporation Ltd.,Luoyang 471023, China 2 National Key Engineering Laboratory for Polysilicon Production, Luoyang 471023, China 3 China ENFI Engineering Co., Ltd., Beijing 100038, China |
|
|
Abstract The purity of the zone melt polysilicon should be more than 13N, and the silicon rod should meet the requirements of each performance index. Because of the long development period and the difficulty of preparation, under the condition of complete blockade of foreign technology, the domestic polycrystalline silicon industry starts late, and basic research on process control, process technology route and detection and analysis method of high purity product quality is weak. In this paper, the technological routes of preparing zone melt polysilicon by silane CVD method and modified Siemens method are mainly analyzed. From the aspects of raw material control, core equipment structure, key materials, reaction mechanism, etc., a comprehensive analysis is made. On the basis of comparing the characteristics of different process routes, the development of related fields of zone melt polysilicon is prospected.
|
Published: 08 January 2021
|
|
Fund:This work was financially supported by the Consolidation of Industrial Foundation of China in 2016 (0714-EMTC02-5593/13). |
About author:: Hui Chen, engineer of Luoyang China Silicon Co., Ltd. As the core researcher of the project, he participated in 2 National “Twelfth Five-Year” Plans for Science & Technology Support, 2 electronic information industry development fund projects of the Ministry of industry and information technology, 1 industrial foundation strengthening project and 1 major science and technology special project of Henan Province in 2010—2019. As the project leader, he presided over and completed 7 science and technology projects of Luoyang City. Four patents have been applied for, three achievements have been identified (two of which have reached the international advanced level); one first prize of Henan ProvincialScience and Technology Progress Award and one first prize of Luoyang science and Technology Progress Award; the research work mainly focuses on semiconductor silicon-based materials, and carries out high-purity polysilicon and high-purity gas technology for electronic chips. |
|
|
1 Du S H, Liu L J. Particulate Science and Technology,2020,38(3), 261. 2 谭毅, 孙世海, 董伟, 等.材料工程,2012(8),33. 3 牛晓龙, 蔡春立, 何凤池,等.河北工业科技,2014, 31(50),452. 4 Luisa B, Caroline G, Trevor F, et al. Journal of Environmental Chemical Engineering,2017,5(6), 5968. 5 Vahid A, Tohid N, Ghaffar B, et al. Chemical Engineering Research and Design,2015,104,53. 6 王晓静, 张灿, 黄益平,等.化学工业与工程, 2016,33(4),56. 7 徐远志, 刘阳赞, 侯彦清,等.云南冶金, 2018, 47(1),57. 8 张灿. 带有热管的新型CVD反应器的设计和研究. 硕士学位论文, 天津大学, 2015. 9 王晓静, 王磊, 张芳, 等. 西北大学学报(自然科学版), 2013, 43(6),903. 10 马越.多晶硅还原炉内温度场模拟. 硕士学位论文,中国矿业大学, 2019. 11 Nie Z, Hou Y, Xie G, et al. International Journal of Heat and Mass Transfer, 2015, 90, 1026. 12 Zhang Z, Yuan S, Yu X, et al. Solar Energy Materials and Solar Cells, 2020, 211, 110520. 13 栗一甲. 化工管理, 2018(17),103. 14 杨金祥, 石爽, 姜大川, 等. 材料导报, 2019, 33(专辑33),28. 15 贺玉刚, 王芳, 孙强, 等. 无机盐工业, 2020, 52(3),72. 16 Filtvedt J, Filtvedt W O, U.S. patent application, 9156704, 2015. 17 孙仲刚, 于波. 河北工业科技, 2016(1), 63. 18 段连, 周阳, 刘春江. 化学工业与工程, 2014(6),69. 19 侯彦青, 方文宝, 周扬民, 等. 昆明理工大学学报(自然科学版), 2018, 43(4),1. 20 聂陟枫, 谢刚, 侯彦青, 等. 人工晶体学报, 2014, 43(7),1774. 21 栾国旗, 张殿朝, 闫萍, 等. 电子工业专用设备, 2010(8), 16. 22 Ren S, Tan Y, Jiang D, et al. Materials Science in Semiconductor Proces-sing, 2018, 74, 102. |
|
|
|