| POLYMERS AND POLYMER MATRIX COMPOSITES |
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| Microstructure Evolution of Polystyrene Nanosphere Template and Si Substrate with the Exposure Time Under Ion Beam Bombardment |
| LI Dongze1, ZHANG Mingling1, YANG Jie1,2, WANG Chong1,2, YANG Yu2,3
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1 School of Materials Science and Engineering, Yunnan University, Kunming 650091, China
2 International Joint Research Center for Optoelectronic and Energy Materials, Yunnan University, Kunming 650091, China
3 School of Energy, Yunnan University, Kunming 650091, China |
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Abstract Aself-assembled monolayer film of polystyrene (PS) nanospheres with close-packed arrays on Si substrate was bombarded at normal incidence by Ar+ ion beam. The systematic study of non-selected etching of PS nanospheres and Si substrate were performed through the investigation on their microstructure evolution with the exposure time. With an increase in exposure time, the diameter and height of PS nanoparticles decreased monotonically, while the etching rate of nanoparticle height was higher. In this process, the shapes of PS nanoparticles were transformed from symmetrical sphere to asymmetric sphere and then cone. The reason for the first step of shape transition was the anisotropic etching of PS nanoparticles during physical sputtering process. For the second shape transition, it was attributed to the thermal energy accumulated gradually in a long-time bombardment of ion beam. At the same time, the surface structure of Si substrate was also changed. When the exposure time was 4 min, Si mesas with cylindrical morphology were observed under the PS nanoparticles. The change of the bottom diameter of Si mesas showed a trend of first stabilizing and then decreasing with the increase of exposure time. While, the height of Si mesas was continually enhanced. Simultaneously, the transition of Si mesa shapes also occurred. In the first step, cylindrical Si mesas were transformed to ones with truncated cone shape, leading to the stabilization of bottom diameter at the beginning of ion beam bombardment. Secondly, the shapes of Si mesas were transformed from truncated cone to cone after PS nanoparticles disappeared. And then ordered array of Si nanocones with a diameter range of 65—100 nm have been obtained. Combined with the suitable non-close-packed PS nanoparticle arrays and metal-assisted chemical etc-hing technology, ordered array of Si nanowires with a diameter range of 70—124 nm was prepared. These results lay a foundation and provide an alternative method for the development of novel ordered nanomaterials.
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Published: 24 December 2020
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| Fund:This work was financially supported by the National Natural Science Foundation of China (11504322,11564043), the Application Basic Research Project of Yunnan Province (2019FB130,2016FB002), Science Research Fundation of Yunnan Province Education Department (2019J0004), and the Training Program for the East-Land Young Teachers in YNU. |
About author:: Dongze Li graduated from Kunming University of Science and Technology with a bachelor′s degree in materials science and engineering in 2018. Now he is a master student at Yunnan University and conducting research under the guidance of associate Fellow Jie Yang. At present, his research has focused on the preparation and performance research of silicon-based low-dimensional nanomaterials and devices.
Jie Yang obtained his Ph. D. degree in physical che-mistry of metallurgy from Kunming University of Science and Technology and served in Yunnan University in 2013. He is currently an associate research fellow. He has published more than 30 journal papers, applied 8 national invention patents and 5 of them were autho-rized. His research interests focus on the application of nanostructured Ge/Si composite materials in optoelectronics and energy, and the fundamental theory & experimental research about the photodetector, solar cell and lithium ion battery. |
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2020, Vol. 34 
