射频功率和工作压强对Ga、Al共掺杂ZnO薄膜性能的影响

doi:10.11896/cldb.19060040

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Abstract Gallium and aluminum co-doped zinc oxide (GAZO) thin films with high transparency and conductivity were successfully deposited on glass substrates by radio frequency (RF) magnetron sputtering at room temperature. The effects of RF power and working pressure on the structural, optical and electrical characteristics of GAZO thin films were investigated by X-ray diffraction (XRD), UV-Vis-NIR spectrophotometer, four-point-probe setup and ultraviolet photoelectron spectroscopy (UPS). The results show that all GAZO thin films have a hexagonal wurtzite crystal structure with a preferential orientation along (002) direction normal to the substrate, and their average visible transmittance (400—700 nm) are above 90%. The thin films deposited with 200 W and 0.20 Pa yield the lowest resistivity of 1.40×10^-3 Ω·cm and highest figure of merit (FOM) of 8.10×10^-3 Ω^-1. The optical and electrical characteristics of the deposited GAZO thin films indicate that they have potential applications in optoelectronic devices as transparent electrode.

Key words： radio frequency power transparent electrodes ZnO thin films sputtering deposition transparency electric resistivity

Published: 29 May 2020

CLC number:

TB304

Fund:This work was financially supported by the Educational Commission of Guangdong Province, China (680067), Science and Technology Department of Mao-ming City, China (mm2017000007, 2017309) and Guangdong University of Petrochemical Technology, China (2017rc20)

About author:: Guoping Luo received his Ph.D. degree in materials physics and chemistry from the South China University of Technology (SCUT) in 2016. He was appointed to the faculty upon graduation, and is currently a lecturer of the Guangdong University of Petrochemical Technology (GDUPT). He has published more than 10 journal papers. His research interests focus on the optoelectronic materials and devices.
Tianle Li Ph.D., dean of Applied Physics, School of Science, Guangdong University of Petrochemical Technology. He is mainly engaged in organic electronics and device physics. More than 20 papers have been published.

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	LUO Guoping
	ZHANG Manhong
	LIANG Quanbin
	CHEN Dong
	CHEN Xingyuan
	LI Tianle
	ZHU Weiling

Cite this article:

LUO Guoping,ZHANG Manhong,LIANG Quanbin, et al. Effect of Radio Frequency Power and Working Pressure on Characteristics of Ga and Al Co-doped ZnO Thin Films[J]. Materials Reports, 2020, 34(12): 12020-12024.

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http://www.mater-rep.com/EN/10.11896/cldb.19060040 OR http://www.mater-rep.com/EN/Y2020/V34/I12/12020

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