钠钙玻璃上Mg<sub>2</sub>Si薄膜的制备及其电学性质<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.04.003

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Abstract Semiconducting Mg₂Si films were prepared by magnetron sputtering deposition and subsequent annealing on soda-lime glass substrates. The influences of Mg film thickness on the crystal structure and electrical properties of Mg₂Si films were investigated. P-Si and N-Si films with same thickness (175 nm) were deposited on different soda-lime glass substrates by magnetron sputtering, and then Mg films with different thicknesses (240 nm, 256 nm, 272 nm, 288 nm and 304 nm) were deposited on Si films. A series of Mg₂Si semiconductor films were prepared by low vacuum annealing for 4 h. The crystal structure, surface morphology and electrical properties of the obtained films were characterized and analyzed by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect measurement system. The results show that Mg₂Si films with preferential growth of Mg₂Si (220) are prepared successfully by magnetron sputtering technique on soda-lime glass substrates, and that the diffraction peak intensity of obtained Mg₂Si films increases with the increase of thickness of Mg films on Si films. Meantime both the electrical resistivity and mobi-lity decrease, and carrier concentrations increase. The surfaces of the films become continuous with the increase of thickness of Mg films on Si films. Both the electrical conduction type of deposited Si films and the thickness of deposited Mg films affect the electrical conduction type of the obtained Mg₂Si films. When the N-type Si films are deposited firstly on substrates, the electrical conduction type of the obtained Mg₂Si films changes from P-type to N-type with the increase of the thickness of deposited Mg films on Si films. When the P-type Si films are deposited firstly on substrates, the electrical conduction type of the obtained Mg₂Si films becomes P-type. The electrical conduction type of the obtained Mg₂Si films can be controlled conveniently, which is beneficial to the device development of the Mg₂Si films.

Key words： soda-lime glass Mg₂Si film film thickness magnetron sputtering

Published: 02 May 2018

CLC number:

TN304.055

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.04.003 OR http://www.mater-rep.com/EN/Y2017/V31/I4/9

1 Xiao Q Q, Xie Q, Yu Z Q, et al. Influence of sputtering power on the structural and morphological properties of semiconducting Mg₂Si films[J]. Phys Procedia,2011,11:130.
2 Atanassov A, Baleva M. On the band diagram of Mg₂Si/Si heterojunction as deduced from optical constants dispersions[J]. Thin Solid Films,2007,515(5):3046.
3 Baleva M, Zlateva G, Atanassovl A, et al. Resonant Raman scatte-ring in ion-beam-synthesized Mg₂Si in a silicon matrix[J]. Phys Rev B,2005,72(11):115330.
4 Yu Zhiqiang, Xie Quan, Xiao Qingquan, et al. Structure and extinction properties of Mg₂Si crystal[J]. Acta Phys Sinica,2009(10):6889(in Chinese).
余志强, 谢泉, 肖清泉, 等. Mg₂Si晶体结构及消光特性的研究[J]. 物理学报,2009(10):6889.
5 Mahan J, Vantomme A, Langouche G, et al. Semiconducting Mg₂Si thin films prepared by molecular-beam epitaxy[J]. Phys Rev B,1996,54(23):16965.
6 Tani J I, Kido H. Thermoelectric properties of Bi-doped Mg₂Si se-miconductors[J]. Physica B,2005,364(1):218.
7 陈茜,谢泉,闫万珺,等. Mg₂Si电子结构及光学性质的研究[C]//第六届中国功能材料及其应用学术会议.武汉,2007.
8 Shao Fei, Zhang Jinmin, Tang Huajie, et al. Influence of sputtering Ar flux on the optical constants of metal manganese Film[J]. Mater Rev:Res,2014,28(3):101(in Chinese).
邵飞, 张晋敏, 唐华杰, 等. 溅射Ar流量对Mn膜光学常数的影响[J]. 材料导报:研究篇,2014,28(3):101.
9 Serikawa T, Henmi M, Yamaguchi T, et al. Depositions and microstructures of Mg-Si thin film by ion beam sputtering[J]. Surf Coat Technol,2006,200(14-15):4233.
10 Serikawa T, Henmi M, Yamaguchi T, et al. Formation of Mg-Si thin film deposited by ion beam sputtering[J]. J Jpn Insitute Met,2005,69(1):31.
11 Serikawa T, Henmi M, Kondoh K. Microstructure and Mg concentration of Mg-Si thin film deposited by ion beam sputtering on glass substrate[J]. J Vac Sci Technol A,2004,22:1971.
12 Yu Hong, Xie Quan, Xiao Qingquan, et al. Thermal evaporation method of semiconducting Mg₂Si films[J]. J Funct Mater,2013,44(8):1204(in Chinese).
余宏,谢泉,肖清泉,等. Mg₂Si半导体薄膜的热蒸发制备[J]. 功能材料,2013,44(8):1204.
13 Xiao Q Q, Xie Q, Chen Q, et al. Annealing effects on the formation of semiconducting Mg₂Si film using magnetron sputtering deposition[J]. J Semicond,2011,32(8):082002.
14 Akiyama K, Katagiri A, Ogawa S, et al. Epitaxial growth of Mg₂Si films on strontium titanate single crystals[J]. Phys Status Solidi C,2013,10(12):1688.
15 Ogawa S, Katagiri A, Shimizu T, et al. Electrical properties of (110)-oriented nondoped Mg₂Si films with p-type conduction prepared by RF magnetron sputtering method[J]. J Electron Mater,2014,43(6):2269.
16 Katagiri A, Ogawa S, Oikawa T, et al. Structural characterization of epitaxial Mg₂Si films grown on MgO and MgO-buffered Al₂O₃ substrates[J]. Jpn J Appl Phys,2015,54(7S2):07JC01.
17 Ohring M. The materials science of thin films: Deposition and structure[M]. Salt Lake City: Academic Press,2002.
18 Chu W, Lau S, Mayer J, et al. Implanted noble-gas atoms as diffusion markers in silicide formation[J]. Thin Solid Films,1975,25(2):395.
19 Kubouchi M, Hayashi K, Miyazaki Y. Quantitative analysis of interstitial Mg in Mg₂Si studied by single crystal X-ray diffraction[J]. J Alloy Compd,2014,617:389.
20 Wood D, Zunger A. Electronic structure of generic semiconductors: Antifluorite silicide and Ⅲ-Ⅴ compounds[J]. Phys Rev B,1986,34(6):4105.
21 Morris R, Redin R, Danielson G. Semiconducting properties of Mg₂Si single crystals[J]. Phys Rev,1958,109(6):1909.