碳化硅单晶材料残余应力检测技术研究进展

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Abstract SiC single crystal materials, a typical representative of the third generation wide band-gap semiconductor materials, are widely used in military, nuclear energy and electronic applications due to their high strength, good chemical stability and strong anti-interference ability. However, residual stress often exists in the process of preparation, processing and use of SiC single crystal, which seriously affects the quality and service life of single crystal materials. In order to evaluate crystal quality, reliability and material life precisely, it is necessary to study the stress measurement and distribution of single crystal materials. In this paper, the source of residual stress in SiC single crystal is analyzed, the research status of stress detection technology for single crystal materials is reviewed and the developing trend of stress detection for SiC single crystal material are also discussed.

Key words： SiC single crystal materials residual stress photoelastic method X-ray diffraction method micro-Raman spectrometry

Published: 25 November 2019

CLC number:

O765

About author:: Ya Deng received her B.E. degree in materials science and engineering from Shandong University of Technology in June 2016. She is currently pursuing her Ph.D. in the Institute of Composite Materials and Structures, Harbin Institute of Technology under the supervision of Prof. Yumin Zhang. At present, her research has focused on nondestructive stress detection of single crystal mate-rials.
Yufeng Zhou received his Ph.D. degree from Harbin Institute of Technology in december 2008. His research has focused on nondestructive testing for residual stress of materials.

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	DENG Ya
	ZHANG Yumin
	ZHOU Yufeng
	WANG Wei

Cite this article:

DENG Ya,ZHANG Yumin,ZHOU Yufeng, et al. Research Progress on Measurement of Residual Stress inSiC Single Crystal Materials[J]. Materials Reports, 2019, 33(Z2): 206-209.

URL:

http://www.mater-rep.com/EN/ OR http://www.mater-rep.com/EN/Y2019/V33/IZ2/206

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