近红外Mg<sub>2</sub>Si/Si异质结光电二极管的结构设计与仿真

doi:10.11896/cldb.19030017

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Abstract The device structure of a near-infrared Mg₂Si/Si heterojunction photodiode was designed, and its main parameters of the device such as spectral responsivity, dark current density were simulated using Silvaco-TCAD software. The simulation results show that the Mg₂Si/Si pin heterojunction photodiode is more sensitive in the spectral range of 0.6—1.5 μm than Mg₂Si/Si pn heterojunction photodiode. The peak wavelength of the photodiode is 1.11 μm and the maximum spectral responsivity is 0.742 A·W^-1. The wavelength of 1.31 μm still has a good responsivity of up to 0.53 A·W^-1. Dark current density of the pin photodiode is approximately 1×10^-6 A·cm^-2, which is slight bigger than that of the pn photodiode. The interface-state density of the Mg₂Si/Si heterojunction should not exceed 1×10¹¹ cm^-2.

Key words： Mg₂Si/Si heterojunction spectral response dark current density interface-state density

Published: 29 August 2019

CLC number:

TN302

About author:: Hao Chen, a master student at College of Big Data and Information Engineering, Guizhou University, is engaged in the research of optoelectronic materials and devices.Qingquan Xiao obtained his M.E. degree in 2007 and Ph.D. degree in 2011 in microelectronics and solid-state electronics from Guizhou University and served in Department of Electronic Science of Guizhou University in 2007 till now. He is currently an associate professor and master supervisor. He performed collaborative research in 2015—2016 at University of Greenwich, UK. He has published more than 50 journal papers, and 9 patents were authorized. His team’s research interests are the preparation and characterization of the silicide materials, and the design and preparation of the optoelectronic device based on the silicide.

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	CHEN Hao
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Cite this article:

CHEN Hao,XIAO Qingquan,XIE Quan, et al. Structure Design and Simulation of Near-infrared Mg₂Si/Si Heterojunction Photodiode[J]. Materials Reports, 2019, 33(20): 3358-3362.

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http://www.mater-rep.com/EN/10.11896/cldb.19030017 OR http://www.mater-rep.com/EN/Y2019/V33/I20/3358

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