金基中低温钎料的研究现状与展望

doi:10.11896/cldb.18090164

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Abstract As fast development of electronic packaging technology and the inevitable trend of lead-free soldering, a number of alloys have been proposed as alternative Pb-free solders, but in the field of microelectronic and optoelectronic packages, high priced Au-based solder (such as Au-Sn, Au-Si, Au-Ge) is considered as the best one to substitute for high-Pb solders due to their excellent comprehensive properties. However, with the development of high-integration and high-power electronic devices, Au-based low-temperature solders with melting point below 400 ℃ can not fully meet the packaging requirements. It is urgent to develop mid-temperature filler metals with melting point between 400 ℃ and 600 ℃. At pre-sent, among all filler metals with melting points in the range of 280—600 ℃, Au-based alloy systems are the main choice for high-temperature bonding applications in the electronic packaging, or even the only choice.
Au-based filler metals have superior resistance to corrosion, high electrical and thermal conductivity, excellent mechanical strength and high reliability, while they are difficult to be processed due to their high brittleness. Processing difficulty, low yield and poor product performance seriously affect the application of Au-based solders. What’s more, the Au content in Au-based alloys is generally so high that the use-cost of Au-based solders is high. Therefore, researchers not only studied the processing technology of brittle solders, but also made a lot of explorations in replacing Au with alloying elements and developing new Au-based alloy systems.
The casting drawing and rolling method, laminate-rolling process, roll rapid solidification method and the electroplating deposition method were developed to solve the processing problem caused by the high brittleness of the Au-based alloys. Alloy foils with thickness less than 0.1 mm can be worked out by means of using these processes. The effect of alloying elements on Au-based solders shows that low melting point alloying elements (e.g. Sn, Sb, In) can reduce the melting point of Au-Ge solder, and the ductility of Au-Ge solder is enhanced by adding a small amount of Sb. Sb and Sn can also inhibit excessive growth of interfacial reaction layer. Among many gold-based alloy systems, alloys like Au-Ag-Si, Au-Ag-Ge, Au-In, and Au-Ga have been proposed as medium-temperature solders. Although these alloys are brittle and cannot be processed by conventional methods, they have great potential for being widely used in advanced electronic packaging owing to their excellent wettability and good mechanical properties.
This review offers a retrospection of the research efforts with respect to Au-based medium-low temperature filler metals. The properties, characteristics, application fields and influence of alloying elements of Au-based medium-low temperature filler metals are introduced. The various processing methods and their advantages and disadvantages of high-brittle Au-based medium-low temperature filler metals are summarized. The performance and characteristics of Au-Ag, Au-In and Au-Ga medium-temperature filler metals are analyzed and compared emphatically. Based on the existing literature, the development direction of Au-based medium-low temperature filler metals is predicted.

Key words： Au-based solders mid-temperature filler metals microstructure wettability mechanical property

Published: 15 August 2019

CLC number:

TG425

About author:: Han Liu received his B.E. degree in material science and engineering from Nanjing University of Aeronautics and Astronautics (NUAA) in 2015. He is currently pursuing his Ph.D. at the College of Material Science and Technology in NUAA under the supervision of Prof. Songbai Xue. His research has focused on advanced packaging materials.Songbai Xue, who enjoys special government allo-wances is currently a level-2 professor and Ph.D. supervisor at the College of Material Science and Technology in Nanjing University of Aeronautics and Astronautics (NUAA).

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	LIU Han
	XUE Songbai
	WANG Liujue
	LIN Yaowei
	CHEN Hongneng

Cite this article:

LIU Han,XUE Songbai,WANG Liujue, et al. Research Status and Prospect of Au-based Medium-Low TemperatureFiller Metals[J]. Materials Reports, 2019, 33(19): 3189-3195.

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http://www.mater-rep.com/EN/10.11896/cldb.18090164 OR http://www.mater-rep.com/EN/Y2019/V33/I19/3189

Fang J H, Xie M, Zhang J M, et al. The Chinese Journal of Nonferrous Metals,2017,27(8),1659(in Chinese).方继恒,谢明,张吉明,等.中国有色金属学报,2017,27(8),1659.2 Zhang G L, Xu K, Zhao M, et al. Precious Metals,2014,35(3),71(in Chinese).张利广,许昆,赵明,等.贵金属,2014,35(3),71.3 Li C Y, Wang X T, Yuan W X. Journal of University of Science and Technology Beijing,2008,30(12),1402(in Chinese).李春元,王西涛,袁文霞.北京科技大学学报,2008,30(12),1402.4 Vianco P T, Grant R P, Rejent J A, et al. Journal of Surface Mount Technology,2013,26,1.5 Chen D Q, Li W, Luo X M, et al. Precious Metals,2009,30(3),62(in Chinese).陈登权,李伟,罗锡明,等.贵金属,2009,30(3),62.6 Wang J, Liu Y J, Tang C Y, et al. Thermochimica Acta,2011,512(1-2),240.7 Liu H S, Wang J, Du Y, et al. Zeitschrift Für Metallkunde,2004,95(1),45.8 Liu H S, Cui Y, Ishida K, et al. Calphad,2003,27(1),27.9 Liu H S, Ishida K, Jin Z P, et al. Intermetallics,2003,11(10),987.10 Wang J, Liu Y J, Liu L B, et al. Calphad,2011,35(2),242.11 Liu J, Guo C, Li C, et al. Journal of Alloys & Compounds,2010,508(1),62.12 Okamoto H. Journal of Phase Equilibria & Diffusion,2013,34(2),174.13 Awe O E, Oshakuade O M. Physica B Condensed Matter,2017,507,84.14 Wang J, Liu H S, Liu L B, et al. Calphad,2007,31(4),545.15 Wang J, Liu H S, Liu L B, et al. Transactions of Nonferrous Metals Society of China,2007,17(6),1405.16 Zoro E, Servant C, Legendre B. Journal of Phase Equilibria & Diffusion,2007,28(3),250.17 Zoro E, Servant C, Legendre B. Calphad,2007,31(1),89.18 Wang J, Meng F G, Liu H S, et al. Journal of Electronic Materials,2007,36(5),568.19 Wang J, Leinenbach C, Roth M. Journal of Alloys & Compounds,2009,481(1),830.20 Wang J, Leinenbach C, Roth M. Journal of Alloys & Compounds,2009,485(1),577.21 Liu H S, Liu C L, Ishida K, et al. Journal of Electronic Materials,2003,32(11),1290.22 Hassam S, Boa D, Rogez J. Journal of Alloys & Compounds,2012,520,65.23 Gierlotka W. Journal of Alloys & Compounds,2013,579,533.24 Liu H S, Liu C L, Wang C, et al. Journal of Electronic Materials,2003,32(2),81.25 Meng F G, Liu H S, Liu L B, et al. Journal of Alloys & Compounds,2007,431(1),292.26 Wang J, Liu Y J, Liu L B, et al. Journal of Alloys & Compounds,2011,509(6),3057.27 Hindler M, Guo Z, Mikula A. Journal of Chemical Thermodynamics,2012,55(6),102.28 Peng J, Wang R C, Liu H S, et al. Journal of Materials Science Materials in Electronics,2018,29(1),313.29 Zhu Z X, Li C C, Liao L L, et al. Journal of Alloys & Compounds,2016,671,340.30 Elmer J W, Mulay R P. Scripta Materialia,2016,120,14.31 Lee B S, Ko Y H, Bang J H, et al. Microelectronics Reliability,2017,71,119.32 Peng J, Wang R C, Wang M, et al. Journal of Electronic Materials,2017,46(4),1.33 Fan L X, Jing H Y, Xu L Y. Electric Welding Machine,2006,36(11),14(in Chinese).范琳霞,荆洪阳,徐连勇.电焊机,2006,36(11),14.34 Wei X F. Preparation and related fundamental research on AuSn20 eutectic solder for electronic packaging. Ph.D. Thesis, Central South University, China,2014(in Chinese).韦小凤.电子封装用AuSn20共晶钎料的制备及其相关基础研究.博士学位论文,中南大学,2014.35 Zhang W. Study on hot compression deformation behavior and processing performance of Au-20Sn eutectic alloy. Master’s Thesis, Yunnan University, China,2014(in Chinese).张伟.金锡共晶合金热压缩变形行为和加工性能的研究.硕士学位论文,云南大学,2014.36 Watanabe Osamu. Japan Patent, JPH05177380A,1993.37 Komata Masashi. Japan Patent, JPH0215897A,1990.38 Ken-ichi Miyazaki. U.S. Patent, US7048813,2006.39 Kim Moon Chul. Korea Patent, KR1020040107898,2006.40 Kim Moon Chul. Korea Patent, KR1020050098633,2006.41 Yamamoto Hironobu. Japan Patent, JPS58100992A,1983.42 Yamamoto Hironobu. Japan Patent, JPS58100993A,1983.43 Coad B C. U.S. Patent, US3181935,1965.44 刘泽光,杨富陶,顾开源.中国专利,CN1066411,1992.45 Liu R, Wang R C, Wei X F, et al. Journal of Central South University (Science and Technology),2015(11),4021(in Chinese).刘锐,王日初,韦小凤,等.中南大学学报(自然科学版),2015(11),4021.46 王檬,陈一胜,朱志云,等.中国专利,CN103290251A,2013.47 Kaneshiro Yoshio. Japan Patent, JP2000026989A,2000.48 Ivey D G, Sun W. U.S. Patent, US6245208,2001.49 Lang F Q, Yamaguchi H, Nakagawa H, et al. Journal of Materials Science & Technology,2015,31(5),445.50 Bushra S. Investigation of wafer level Au-Si eutectic bonding of shape memory alloy (SMA) with silicon. Master’s Thesis, KTH Royal Institute of Technology, Sweden,2011.51 Hu Y F, Li X X, Yu S L. Electric Welding Machine,2008,38(9),57(in Chinese).胡永芳,李孝轩,禹胜林.电焊机,2008,38(9),57.52 Xie H C, Yang A H, Zhuang D X, et al. Precious Metals,2011,32(1),35(in Chinese).谢宏潮,阳岸恒,庄滇湘,等.贵金属,2011,32(1),35.53 Chidambaram V, Shan G. Journal of Electronic Materials,2012,41(8),2107.54 Chidambaram V, Yeung H B, Shan G. In: 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. Singapore,2012,pp.1.55 Leinenbach C, Valenza F, Giuranno D, et al. Journal of Electronic Materials,2011,40(7),1533.56 Chidambaram V, Hald J, Hattel J. Journal of Alloys & Compounds,2010,490(1),170.57 Jin S, Valenza F, Novakovic R, et al. Journal of Electronic Materials,2013,42(6),1024.58 Weyrich N, Jin S, Duarte L I, et al. Journal of Materials Engineering & Performance,2014,23(5),1585.59 Chidambaram V, Rong E P J, Lip G C, et al. In: 2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013). Singapore,2013,pp.202.60 Chidambaram V, Hald J, Ambat R, et al. JOM,2009,61(6),59.61 Reeve H T. U.S. Patent, US2503564,1950.62 Mo W J, Wang Z F, Wang H S, et al. Precious Metals,2004,25(4),45(in Chinese).莫文剑,王志法,王海山,等.贵金属,2004,25(4),45.63 Cui D T, Wang Z, Wu H, et al. Rare Metal Materials & Engineering,2008,37(4),690.64 Cui D T. Preparation and related fundamental research on mid-temperature eutectic solder ribbon. Ph.D. Thesis, Central South University, China,2008(in Chinese).崔大田.中温共晶钎料薄带制备及其相关基础研究.博士学位论文,中南大学,2008.65 Cui D T, Wang Z F, Hu Z J, et al. Rare Metal Materials & Engineering,2012,41(3),442(in Chinese).崔大田,王志法,胡忠举,等.稀有金属材料与工程,2012,41(3),442.66 Cui D T, Wang Z F, Zhou J, et al. The Chinese Journal of Nonferrous Metals,2007,17(9),1501(in Chinese).崔大田,王志法,周俊,等.中国有色金属学报,2007,17(9),1501.67 Zwingmann G. Gold Bulletin,1978,11(1),9.68 Cui D T, Wang Z F, Mo W J. Journal of Central South University (Scie-nce and Technology),2007,38(1),36(in Chinese).崔大田,王志法,莫文剑,等.中南大学学报(自然科学版),2007,38(1),36.69 Sohn Y C, Wang Q, Ham S J, et al. In: 2007 Proceedings 57th Electronic Components and Technology Conference. Reno,2007,pp,633.70 Grummel B J, Shen Z J, Mustain H A, et al. IEEE Transactions on Components Packaging & Manufacturing Technology,2013,3(5),716.71 Grummel B J, Mustain H A, Shen Z J, et al. In: 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs. San Diego,2011,pp.260.72 Okamoto H. Journal of Phase Equilibria and Diffusion,2004,25(2),197.73 Liu Z G, Chen D Q, Li W, et al. Precious Metals,2010,31(2),41(in Chinese).刘泽光,陈登权,李伟,等.贵金属,2010,31(2),41.74 Harman J G G. U.S. Patent, US3141238,1964.75 Taniguchi H, Shimada T, Miyazaki K. U.S. Patent, US9604317,2017.