Materials Reports  2019, Vol. 33 Issue (z1): 45-49 |
| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Structural Parameters Optimization of Backside of N-type Silicon Back-contact Heterojunction Solar Cells |
| LU Gang1, YANG Zhenying1, HE Fengqin1, ZHENG Lu1, QIAN Jun1, FENG Xianfeng2, GAO Jiaqing2
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1 Qinghai Huanghe Hydropower Development Co., LTD Photovoltaic Industry Technology Branch, Xining 810007
2 Automation and Electric Information Department Xi’an University of Technology, Xi’an 710048 |
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Abstract In this work,the effects of backside structural parameters as emitter width, back surface electric field width and isolation layer width on the HIBC crystalline silicon solar cell output properties were simulated by Silvaco-TCAD semiconductor device simulation software.The influences of backside structural parameters on HIBC solar cell’s short-circuit current, open-circuit voltage, fill factor and conversion efficiency were analyzed comprehensively. The optimization parameters of HIBC solar cell’s backside structure are as follows: the thickness of the backside intrinsic amorphous silicon film is 3 nm, the P type emitter junction width is 700 μm, the backside surface electric field width is 100 μm, the p-a-Si doping concentration is 1×1019 cm-3, and n-a-Si doping concentration is 5×1019 cm-3.
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Published: 05 July 2019
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| About author:: Gang Lu, Qinghai Huanghe Hydropower Development Co., Ltd. Photovoltaic Industry Technology Branch, chief engineer, doctor, professor-level senior engineer, mainly engaged in solar crystal silicon cells, components research and development work.Zhenying Yang, Qinghai Huanghe Hydropower Deve-lopment Co., Ltd. Photovoltaic Industry Technology Branch, component process design director, master, engineer, mainly engaged in solar crystal silicon battery, component product development and process optimization design work. |
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