PMMA/PVA双支撑膜辅助铜刻蚀法:一种改进的石墨烯转移技术

doi:10.11896/cldb.17110292

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Abstract Graphene has been regarded as a promising material with wide applications in microelectronic devices, biosensors, fuel cells and energy sto-rage devices owing to its unique properties, such as high carrier mobility, high thermal conductivity and high mechanical strength. How to transfer graphene onto relevant substrates while minimising resin residues and cracks deserves is a crucial point for fabricating electronic devices using graphene. The conventional graphene transfer technology based on copper etching method has been plagued by the defect of surface pollution resulting from the unresolved and remained PMMA. We herein proposed an improved copper etching method, i.e. PMMA/PVA dual support membranes method, by indroducing a layer of polyvinyl alcohol (PVA,98% alcoholysis) with high water solubility to serve as the barrier layer between PMMA (providing high strength) and graphene. According to the results of optical microscopy (OM), Raman spectroscopy and electrical properties measurement, the transferred graphene with less residual, clean surface, high crystallinity and satisfactory back gate field effect transistor (BGFET) carrier mobility can be obtained through this improved copper etching method. Moreover, this method also has the advantages of both simple operation and potential universality for the transfer of other two-dimensional materials.

Key words： graphene transfer polyvinyl alcohol (PVA) resin residue copper etching method polymethyl methacrylate (PMMA) support membrane

Published: 31 January 2019

CLC number:

O474.1

Fund:This work was financially supported by National Science Foundation of China (61604175,61427901).

About author:: Shengtao Wang received his M.S. degrees in June 2018 from Beijing Jiaotong University in engineering. From March 2017 to March 2018, he co-educated and lear-ned at the Institute of Microelectronics (CAS), focusing on the research of two-dimensional materials and optical components.Weier Lu received her PhD. Degree in materials from Institute of Physics and Chemistry (CAS) in 2012. She is currently an associate professor in Institute of Microelectrics (CAS) and participates in the development of film deposition equipment and technology. Her research interests are preparation of nanofilms, two-dimensional materials and devices.

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	WANG Shengtao
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	WANG Tong
	XIA Yang

Cite this article:

WANG Shengtao,LU Weier,WANG Tong, et al. An Improved Copper Etching Method that Involves PMMA/PVA Dual Support Membranes and Serves to Transfer Graphene[J]. Materials Reports, 2019, 33(2): 230-233.

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http://www.mater-rep.com/EN/10.11896/cldb.17110292 OR http://www.mater-rep.com/EN/Y2019/V33/I2/230

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