冷速对液态GaAs快速凝固过程中微观结构的影响

doi:10.11896/j.issn.1005-023X.2018.14.005

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Abstract A simulation study was performed for the effects of different cooling rates on microstructure during solidification of liquid GaAs by means of molecular dynamics method. Through the pair distribution function, the average coordination number, the bond angle distribution function, the dihedral angle distribution and visualization method were used to analyze the variations of microstructure during the solidification process. Results show that part of the As atoms converged and formed γ-As(simple cubic structure As₈), when the cooling rate is 1×10¹⁰ K/s and 2×10¹⁰ K/s, the Ga enrichment area are mainly composed of zinc-blende and wurtzite crystal structure; when the cooling rate is higher than 5×10¹⁰ K/s, the Ga enrichment area are mainly formed of amorphous structure to give priority to the structure of Ga-As-Ga and Ga-Ga-Ga ternary ring.

Key words： liquid GaAs solidification process cooling rate microstructure

Published: 31 July 2018

CLC number:

TN304.02

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	Articles by authors
	CHEN Qian
	CHEN Qing
	LIANG Yongchao
	GAO Tinghong
	GUO Xiaotian
	TIAN Ze’an
	XIE Quan
	HE Fan

Cite this article:

CHEN Qian,CHEN Qing,LIANG Yongchao, et al. Effect of Cooling Rates on Microstructures During Solidification of Liquid GaAs[J]. Materials Reports, 2018, 32(14): 2351-2354.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.14.005 OR http://www.mater-rep.com/EN/Y2018/V32/I14/2351

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