定向凝固法多晶硅杂质控制数值模拟概述

doi:10.11896/j.issn.1005-023X.2018.11.005

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Abstract  The continuous consumption of traditional energy sources is exaggerating the prominence of renewable energy production and utilization, and solar photovoltaic power generation has gradually been regarded as one of the most promising renewable energy techniques. Multicrystalline silicon, owing to high efficiency and low cost, has now become the most important photovoltaic material, and quality and cost of its ingot will directly affect the cost of solar cells and the efficiency of photoelectric conversion. Directional solidification (DS) method is an important way to obtain multicrystalline silicon ingot, but suffers many problems in the growth of crystalline silicon, including melt flow, impurities transfer, shape and structure of solid-liquid(S-L) interface, and defects. Harmful impurities introduced during the directional solidification process will seriously affect the ingot’s mechanical and electrical properties, and thus are the key factor limiting the photoelectric conversion efficiency of multicrystalline silicon.
    The heat and mass transfer in the DS furnace under high temperatures during the crystal growth process is extremely complica-ted and shows no single linear relationship, no inferentiality, and difficulty for experimental measurements. So the numerical simulation is considered as an important way to study the heat and mass transfer in the DS process. There have been two useful aspects for the reduction of impurities: I. the source of impurities — impurities in the raw materials and impurities generated during the crystal growth process; II. transport of impurities — finding the transport rule of impurities in melts and argon, and using this rule to control the segregation and transport of impurities.
    In recent years, from the perspective of controlling the impurity generation and transport, most of the research works which intend to reduce the harmful impurities in multicrystalline silicon involve the following methods: I. controlling the source of impurities, including inhibiting the chemical reaction between crucible and baffle, optimizing top crucible cover plate, and introducing silicon carbide coating, etc.; II. improving argon flow by adopting argon guidance system, regulating furnace pressure and argon flow rate; III. optimizing melt convection, including controlling melt flow and segregation, adjusting the power and arrangement of heaters, adopting rotatable crucible, adjusting the position of graphite carbon felt and so on.
    The intention to cut the cost of DS multicrystalline silicon ingot gives rise to increasingly bigger crucible and larger feeding amount, which make the melt convection, impurity transport and interface shape more difficult to control. The external magnetic field has been proved to be powerful in controlling melt convection and further controlling impurity transport, and the relevant research is still in its infancy. As the electromagnetic field (EMF) and traveling magnetic field (TMF) display great potential in controlling the stirring melt convection, they have gradually found application in the crystal growth process.
    On the basis of an analysis over impurity sources and transport mechanism, this review provides a comprehensive description of the generation, distribution, transport and removal of harmful impurities in the directional solidification process, as well as a summary of the effects of argon guidance system, heaters and magnetic field on impurities with respect to numerical simulation optimization.

Key words： multicrystalline silicon ingot numerical simulation optimization directional solidification system impurity transport and control magnetic field

Published: 20 July 2018

CLC number:	TB321
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	SU Wenjia
	NIU Wenqing
	QI Xiaofang
	LI Chen
	WANG Junfeng

Cite this article:

SU Wenjia,NIU Wenqing,QI Xiaofang, et al. A Review of Numerical Simulation for Impurity Control in the Directional Solidification Process of Multicrystalline Silicon[J]. Materials Reports, 2018, 32(11): 1795-1805.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.11.005 OR http://www.mater-rep.com/EN/Y2018/V32/I11/1795

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