Abstract: Magnetoresistance (MR) effects in non-magnetic semiconductors attract lots of attentions because of its great research significance and potential applications in magnetic sensors, high density storage and so forth. In this paper, several typical physical models such as space-charge effect model, nano-inhomogeneous model, diode-assisted geometry enhanced model, carriers recombination model, and avalanche breakdown model are summarized. Finally, the MR effects based on avalanche breakdown of non-magnetic semiconductors are analyzed and forecasted.
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2017, Vol. 31 
